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15KPJ45A C2020D 44103 ESD5B5V RB2415 CSM3392 AN1446 1N6290
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  bc546 ... bc549 bc546 ... bc549 general purpose npn transistors universal-npn-transistoren i c = 100 ma h fe ~ 110/200/420 t jmax = 150c v ceo = 30...65 v p tot = 500 mw version 2018-02-01 to-92 (10d3) (1) (2) dimensions - ma?e [mm] typical applications signal processing, switching, amplification commercial grade 1 ) typische anwendungen signalverarbeitung, schalten, verst?rken standardausfhrung 1 ) features general purpose three current gain groups compliant to rohs, reach, conflict minerals 1 ) besonderheiten universell anwendbar drei stromverst?rkungsklassen konform zu rohs, reach, konfliktmineralien 1 ) mechanical data 1 ) mechanische daten 1 ) (1) taped in ammo pack (raster 2.54) (2) on request: in bulk (raster 1.27, suffix bk) 4000 5000 (1) gegurtet in ammo-pack (raster 2.54) (2) auf anfrage: schttgut (raster 1.27, suffix bk) weight approx. 0.01 g gewicht ca. case material ul 94v-0 geh?usematerial solder & assembly conditions 260c/10s l?t- und einbaubedingungen msl n/a current gain groups stromverst?rkungsgruppen recommended complementary pnp transistors empfohlene komplement?re pnp-transistoren BC546A bc547a bc548a bc549a bc546b bc547b bc548b bc549b bc546c bc547c bc548c bc549c bc556 ... bc559 maximum ratings 2 ) grenzwerte 2 ) bc546 bc547 bc548/549 collector-emitter-voltage C kollektor-emitter-spannung e-b short v ces 80 v 50 v 30 v collector-emitter-voltage C kollektor-emitter-spannung b open v ceo 65 v 45 v 30 v emitter-base-voltage C emitter-basis-spannung c open v ebo 80 v 50 v 30 v emitter-base-voltage c open v ebo 5 v power dissipation C verlustleistung p tot 500 mw 3 ) collector current C kollektorstrom dc i c 100 ma peak collector current C kollektor-spitzenstrom i cm 200 ma peak base current C basis-spitzenstrom i bm 200 ma peak emitter current C emitter-spitzenstrom - i em 200 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c 1 please note the detailed information on our website or at the beginning of the data book bitte beachten sie die detaillierten hinweise auf unserer internetseite bzw. am anfang des datenbuches 2 t a = 25c, unless otherwise specified C t a = 25c, wenn nicht anders angegeben 3 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden ? diotec semiconductor ag http://www.diotec.com/ 1 1 6 1 8 9 2 x 2.54 c b e 2 x 1.27 c b e 4.6 0.1 4 . 6 0 . 1 m i n 1 2 . 5 pb e l v w e e e r o h s
bc546 ... bc549 characteristics kennwerte t j = 25c min. typ. max. dc current gain C kollektor-basis-stromverh?ltnis 1 ) v ce = 5 v i c = 10 a group a group b group c h fe C C C 90 150 270 C C C i c = 2 ma group a group b group c h fe 110 200 420 C C C 220 450 800 i c = 100 ma group a group b group c h fe C C C 120 200 400 C C C collector-emitter cutoff current C kollektor-emitter-reststrom v ce = 80 v 50 v 30 v b-e short bc546 bc547 bc548 / bc549 i ces C 0.2 na 15 na v ce = 80 v 50 v 30 v b-e short t j = 125c bc546 bc547 bc548 / bc549 i ces C C 4 a collector-emitter saturation voltage C kollektor-emitter-s?ttigungsspg. 1 ) i c = 10 ma i b = 0.5 ma i c = 100 ma i b = 5 ma v cesat C C 80 mv 200 mv 250 mv 600 mv base-emitter saturation voltage C basis-emitter-s?ttigungsspannung 1 ) i c = 10 ma i b = 0.5 ma i c = 100 ma i b = 5 ma v besat C C 700 mv 900 mv C C base-emitter-voltage C basis-emitter-spannung 1 ) v ce = 5 v i c = 2 ma v ce = 5 v i c = 10 ma v be 580 mv C 660 mv C 700 mv 77 0 mv gain-bandwidth product C transitfrequenz v ce = 5 v, i c = 10 ma, f = 100 mhz f t C 300 mhz C collector-base capacitance C kollektor-basis-kapazit?t v cb = 10 v, i e =i e = 0, f = 1 mhz c cbo C 3.5 pf 6 pf emitter-base capacitance C emitter-basis-kapazit?t v eb = 0.5 v, i c = i c = 0, f = 1 mhz c ebo C 9 pf C noise figure C rauschzahl v ce = 5 v, i c = 200 a, r g = 2 k f = 1 khz, f = 200 hz f C C 2 db 1.2 db 10 db 4 db thermal resistance junction to ambient w?rmewiderstand sperrschicht C umgebung r tha < 200 k/w 2 ) disclaimer: see data book page 2 or website haftungssauschluss: siehe datenbuch seite 2 oder internet 1 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 2 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden 2 http://www.diotec.com/ ? diotec semiconductor ag


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